Method and apparatus for passive optical characterization of semiconductor substrates subjected to high energy (MEV) ion implantation using high-injection surface photovoltage

ABSTRACT

A semiconductor testing device is used for testing a semiconductor device which has at least one spherical connection terminal. The testing device includes an insulating substrate having an opening formed therein at a position corresponding to the position of the spherical connection terminal, and a contact member, formed on the insulating substrate, including a connection portion which is connected with the spherical connection terminal, at least the connection portion being deformable and extending into the opening.

This is a continuation-in-part application of U.S. patent applicationSer. No. 09/009,261, filed on Jan. 20, 1998, now abandoned.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a semiconductor testing device, and,in-particular, to a semiconductor testing device which is suitable foruse in testing of a semiconductor chip and semiconductor device (whichwill be generically referred to as a to-be-tested device or asemiconductor device, hereinafter) each having spherical connectionterminals.

Recently, a high-density, high-speed and miniaturized semiconductordevice is required for many applications. In order to respond to thisrequirement, a mounting method in which a plurality of semiconductorchips, not sealed in a package (so-called bare chips), or a plurality ofsemiconductor devices, each having a BGA (Ball Grid Array) structure,are directly mounted on a circuit substrate come into use.

In such a mounting method, for example, if one of a plurality of barechips or a plurality of semiconductor devices arranged to form anapparatus has a defect, the entire apparatus is defective. Accordinglyhigh reliability is required for each bare chip or each semiconductordevice.

Therefore, testing of particular bare chips or semiconductor devices soas to ensure that the bare chips or semiconductor devices functionnormally is important.

2. Description of the Related Art

In the related art, various testing methods for testing anon-resin-sealed bare chip or a resin sealed semiconductor device havingspherically projecting spherical connection terminals at the bottomsurface thereof have been proposed and used. Hereinafter, each of anon-resin-sealed bare chip and a resin-sealed semiconductor device willbe generically referred to as a ‘semiconductor device’.

When an electrical operational test of such a semiconductor device isperformed, a probe of a testing device is placed in contact with thespherical connection terminals. Therefore, it is necessary that a testof electrical connection is performed in a condition in whichdeterioration of the spherical connection terminals is negligible.Further, the test should have high reliability at low cost.

One semiconductor testing method in the related art, for example, uses asemiconductor testing socket. When the semiconductor testing socket isused, an electrical operational test of a semiconductor device isperformed using a probe. In this testing method, a testing substrate, onwhich a plurality of probes are arranged at positions corresponding tothe positions of the plurality of spherical connection terminals formedon the bottom surface of the semiconductor device, is used. Theprojecting ends of these probes are caused to directly contact thespherical connection terminals, respectively, so as to perform the test.

This semiconductor testing socket has the plurality of probes arrangedcorresponding to the arrangement of the plurality of sphericalconnection terminals of the semiconductor device. Each probe has bentportion which is bent to a U-shape. When the probe is pressed onto arespective one of the spherical connection terminals of thesemiconductor device, the bent portion of the probe is deformed, andthus, possible damage to the spherical connection terminal is reduced.

However, when electrical testing of a semiconductor device is performedusing the above-described probe testing method, the heights of thespherical connection terminals vary. Thereby, a case may occur whereconnection between the projecting end of the probe and the sphericalconnection terminal is not sufficient. As a result, the testing accuracymay be degraded.

Further, even though each probe has the U-shaped bent portion, when theprojecting end of the probe contacts the spherical connection terminal,the spherical connection terminal, made of solder, may be deformed.

SUMMARY OF THE INVENTION

The present invention has been devised in consideration of theabove-described problems. An object of the present invention is toprovide a semiconductor testing device which can perform the test of adevice having the spherical connection terminals, with high reliability,without deformation of the spherical terminals.

A semiconductor testing device, according to the present invention, fortesting a semiconductor device which has at least one sphericalconnection terminal, comprises:

an insulating substrate having an opening formed therein at a positioncorresponding to the position of the spherical connection terminal; and

a contact member, formed on the insulating substrate, comprising aconnection portion which is connected with the spherical connectionterminal, at least the connection portion being deformable and extendingon the opening.

In this arrangement, even when the heights of the spherical connectionterminals vary, the variation of the heights of the spherical connectionterminals can be accommodated as a result of the connection terminalsbeing appropriately deformed. Thereby, it is possible that all thespherical connection terminals are positively connected with the contactmembers, respectively. Thus, the reliability of the test can beimproved.

Further, during the deformation of the connection portions when theconnection portions are connected with the spherical connectionterminals, respectively, the spherical connection terminals slide on theconnection portions. Thereby, even if oxide film and/or dust are presenton the surfaces of the spherical connection terminals and the connectionportions, the oxide film and/or dust are removed as a result of thesliding contact.

A semiconductor testing device, according to another aspect of thepresent invention, which device is used for performing a test on asemiconductor device having spherical connection terminals, comprises:

a contactor, provided with a single layer of insulating substrate, inwhich substrate an opening is formed at a position corresponding to arespective one of the spherical connection terminals, the contactor alsobeing provided with a contact portion, which includes a connectionportion with which the respective one of the spherical connectionterminals is electrically connected, the contact portion being providedon the single layer of insulating substrate so that the connectionportion is located on the opening; and

a wiring substrate, on which the contactor is mounted in a manner whichpermits installation and removal of the contactor onto and from thewiring substrate, the wiring substrate being provided with a firstconnection terminal which is provided on a first surface, on which thecontactor is mounted, and is electrically connected with the contactportion, a second connection terminal which is provided on a secondsurface, which is opposite to the first surface, and is connectedexternally, and an interposer which electrically connects the firstconnection terminal with the second connection terminal.

In this arrangement, the contact portion and the opening are provided atthe position of the insulating substrate facing the spherical connectionterminal, and the wiring substrate for passing an electric signal fromthe semiconductor device therethrough is provided below the insulatingsubstrate. Therefore, when the semiconductor device is loaded on thecontactor, the spherical connection terminal is connected with thecontact portion, and is electrically connected with the first connectionterminal provided on the wiring substrate via the contact portion.

Further, the first connection terminal is electrically connected withthe second connection terminal which acts as an external connectionterminal via the interposer. Therefore, by arbitrarily arranging theinterposer, it is possible to arbitrarily set a wiring path whichelectrically connects the first connection terminal with the secondconnection terminal.

Thus, the wiring path between the contact portion and the secondconnection terminal is provided not in the contactor but in the wiringsubstrate. Thereby, it is not necessary to provide a multilayercontactor, and a single-layer contactor can be used. As a result, it ispossible to reduce the cost of the contactor. Thereby, when the contactportion is degraded as a result of a test being performed repetitively,and, thereby, replacement of the contactor is necessary, the replacementcan be performed at a low cost. Thus, it is possible to reduce the costrequired for the maintenance.

The contact portion provided on the contactor causes the electric signalto flow therethrough from the semiconductor device to the wiringsubstrate below the insulating substrate directly. As a result, evenwhen the pitch of the spherical connection terminals is reduced, it ispossible to shorten the length of the wiring, and, also, it is possibleto simplify the wiring arrangement. As a result, it is possible to usethe semiconductor testing device in a high-speed electric test.

Other objects and further features of the present invention will becomemore apparent from the following detailed description when read inconjunction with the accompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1 and 2 illustrate a semiconductor testing device in a firstembodiment of the present invention;

FIG. 3 shows a testing socket to which the semiconductor testing devicein the first embodiment is applied;

FIGS. 4 and 5 show wafer contactors to which the semiconductor testingdevice in the first embodiment is applied;

FIGS. 6A and 6B illustrate a semiconductor testing device in a secondembodiment of the present invention;

FIGS. 7A and 7B illustrate a semiconductor testing device in a thirdembodiment of the present invention;

FIGS. 8A and 8B illustrate a semiconductor testing device in a fourthembodiment of the present invention;

FIGS. 9A and 9B illustrate a semiconductor testing device in a fifthembodiment of the present invention;

FIGS. 10A and 10B illustrate a semiconductor testing device in a sixthembodiment of the present invention;

FIGS. 11A and 11B illustrate a semiconductor testing device in a seventhembodiment of the present invention;

FIGS. 12A and 12B illustrate a semiconductor testing device in an eighthembodiment of the present invention;

FIGS. 13A and 13B illustrate a semiconductor testing device in a ninthembodiment of the present invention;

FIGS. 14A and 14B illustrate a semiconductor testing device in a tenthembodiment of the present invention;

FIGS. 15A and 15B illustrate a semiconductor testing device in aneleventh embodiment of the present invention;

FIGS. 16A and 16B illustrate a semiconductor testing device in a twelfthembodiment of the present invention;

FIG. 17 illustrates a semiconductor testing device in a thirteenthembodiment of the present invention;

FIG. 18 illustrates a semiconductor testing device in a fourteenthembodiment of the present invention;

FIG. 19 illustrates a semiconductor testing device in a fifteenthembodiment of the present invention;

FIG. 20 illustrates a semiconductor testing device in a sixteenthembodiment of the present invention;

FIG. 21 illustrates a semiconductor testing device in a seventeenthembodiment of the present invention;

FIGS. 22A and 22B illustrate a semiconductor testing device in aeighteenth embodiment of the present invention;

FIG. 23 illustrates a semiconductor testing device in a nineteenthembodiment of the present invention;

FIG. 24 illustrates a semiconductor testing device in a twentiethembodiment of the present invention;

FIG. 25 illustrates a testing socket in a twenty-first embodiment of thepresent invention;

FIG. 26 illustrates a semiconductor testing device in a twenty-secondembodiment of the present invention;

FIGS. 27A, 27B and 28 show elevational sectional views for illustratinga semiconductor testing device in a twenty-third embodiment of thepresent invention;

FIGS. 29A and 29B illustrate one example of a semiconductor testingdevice;

FIG. 30 illustrates another example of a semiconductor testing device;

FIG. 31 illustrates another example of a semiconductor testing device;

FIG. 32 shows an elevational sectional view for illustrating asemiconductor testing device in a twenty-fourth embodiment of thepresent invention;

FIG. 33A shows an elevational sectional view for illustrating asemiconductor testing device in a twenty-fifth embodiment of the presentinvention; and

FIG. 33B shows a partially magnified plan view of an insulatingsubstrate of the semiconductor testing device in the twenty-fifthembodiment of the present invention;

FIG. 34 shows an elevational sectional view for illustrating asemiconductor testing device in a twenty-sixth embodiment of the presentinvention;

FIG. 35 shows an elevational sectional view for illustrating asemiconductor testing device in a twenty-seventh embodiment of thepresent invention;

FIG. 36 shows an elevational sectional view for illustrating asemiconductor testing device in a twenty-eighth embodiment of thepresent invention;

FIGS. 37A and 37B illustrate first and second variant examples ofcontact portions, respectively;

FIGS. 38A and 38B illustrate a third variant example of a contactportion;

FIGS. 39A and 39B illustrate a fourth variant example of a contactportion.

FIGS. 40A and 40B illustrate a fifth variant example of a contactportion;

FIGS. 41A and 41B illustrate a sixth variant example of a contactportion;

FIGS. 42A and 42B illustrate a seventh variant example of a contactportion;

FIGS. 43A and 43B illustrate an eighth variant example of a contactportion;

FIGS. 44A and 44B illustrate a ninth variant example of a contactportion;

FIGS. 45A and 45B illustrate a tenth variant example of a contactportion;

FIGS. 46A and 46B illustrate an eleventh variant example of a contactportion;

FIGS. 47A and 47B illustrate a twelfth variant example of a contactportion;

FIG. 48 illustrates a thirteenth variant example of a contact portion;

FIG. 49 shows an elevational sectional view for illustrating asemiconductor testing device in a twenty-ninth embodiment of the presentinvention;

FIG. 50 shows an elevational sectional view for illustrating asemiconductor testing device in a thirtieth embodiment of the presentinvention;

FIG. 51 shows an elevational sectional view for illustrating asemiconductor testing device in a thirty-first embodiment of the presentinvention;

FIG. 52 shows a plan view for illustrating a semiconductor testingdevice in a thirty-second embodiment of the present invention; and

FIGS. 53A and 53B show elevational sectional views for illustrating asemiconductor testing device in a thirty-third embodiment of the presentinvention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

U.S. patent application Ser. No. 09/009,261, filed on Jan. 20, 1998, nowabandoned, is incorporated herein by reference.

Embodiments of the present invention will be described with reference tofigures.

FIGS. 1 and 2 illustrate a semiconductor testing device 10A in a firstembodiment of the present invention. FIG. 1 shows a side sectionalelevation view of part of the semiconductor testing device 10A. FIG. 2shows a bottom view of part of the semiconductor testing device 10A.Generally, the semiconductor testing device 10A in the first embodimenthas an insulating substrate 14 and contact members 18.

As shown in FIG. 1, a semiconductor device 1 is loaded on thesemiconductor testing device 10A. In this loaded state, thesemiconductor testing device 10A performs an electrical operational testof the semiconductor device 1. The devices on which the semiconductortesting device 10A performs the test are semiconductor devices such asthe semiconductor device 1 which has the spherical connection terminal 2(hereinafter, referred to as a ‘bump’).

In the following descriptions, examples using the semiconductor device 1having the bump 2 will be mainly described. However, semiconductortesting devices in respective embodiments which will be described nowcan be applied to various devices (for example, a bare chip, a wafer,and so forth).

The semiconductor testing device 10A will now be described in detail.

The insulating substrate 14 is a film member made of an insulating resinmaterial such as a polyimide or the like. The insulating substrate 14 isslightly flexible. A plurality of openings 16 are formed in theinsulating substrate 14. The positions of the openings 16 correspond tothe positions of the bumps 2 formed on the semiconductor device 1,respectively.

Accordingly, in a condition where the semiconductor device 1 iscorrectly positioned over the insulating substrate 14, each bump 2 ofthe semiconductor device 1 faces a respective one of the openings 16 ofthe insulating substrate 14. Further, the diameter of each opening 16 isset to be slightly larger than the diameter of each bump 2. Accordingly,when the semiconductor device 1 is loaded on the semiconductor testingdevice 10A, the openings 16 function as guiding holes for the bumps 2.

Each contact member 18 is made of, for example, a copper (Cu) film, andis formed to have a predetermined pattern using a thin-film formingtechnique such as a plating method, an evaporation method, an etchingmethod, a photolithography technique or the like. Each contact member 18includes an integrally formed wiring portion 20, a terminal portion 22,a connection portion 24A and so forth.

The terminal portion 22 is, for example, a portion with which aconnection pin 42, shown in FIG. 3, is connected. Each connection pin 42connects a testing board 40 and the semiconductor testing device 10Awith one another. Normally, each terminal portion 22 is located inproximity to an edge of the insulating substrate 14. The connectionportions 24A are portions which are electrically connected with thebumps 2 of the semiconductor device 1. Therefore, the connectionportions 24A are provided at the positions which correspond to thepositions of the bumps 2 of the semiconductor device 1, respectively.Each of the wiring portions 20 connects a respective one of the terminalportions 22 and a respective one of the connection portions 24A with oneanother.

The outline shape of each connection portion 24A is approximatelycircular and corresponds to the shape of each bump 2. An opening 26A isformed in each connection portion 24A at the center thereof. In thefirst embodiment, the shape of the opening 26A is a cross. Because thepositions of the connection portions 24A correspond to the positions ofthe bumps, as mentioned above, the positions of the openings 16 formedin the insulating substrate 14 correspond to the positions of theconnection portions 24A, respectively.

That is, the insulating substrate 14 is not present at the position ofeach connection portion 24A, and thus, each connection portion 24A isexposed through a respective one of the openings 16. Accordingly, whenthe semiconductor device 1 is loaded on the semiconductor testing device10A, the bumps 2 are electrically connected with the connection portions24A through the openings 16, respectively, as shown in FIG. 1.

As mentioned above, the insulating substrate 14 is not present at theposition of each connection portion 24A, and the opening 26A is formedin each connection portion 24A at the center thereof. Accordingly, as aresult of the connection portions 24A being pressed by the bumps 2, eachconnection portion 24A is easily deformed.

A method for performing a test on the semiconductor device 1 using thesemiconductor testing device 10A will now be described.

First, the semiconductor device 1 is positioned with respect to thesemiconductor testing device 10A so that the bumps 2 of thesemiconductor device 1 are aligned with the connection portions(openings 16) of the semiconductor testing device 10A. Then, as a resultof pressing the semiconductor device 1 onto the semiconductor testingdevice 10A, the bumps 2 are connected with the connection portions 24A.Thus, the semiconductor device 1 is loaded on the semiconductor testingdevice 10A. A semiconductor tester (not shown in the figures) isconnected with the semiconductor testing device 10A. In the state inwhich the semiconductor device 1 is loaded on the semiconductor testingdevice 10A, an electrical operational test is performed on thesemiconductor device 1 through the semiconductor tester.

Thus, the work of loading the semiconductor device 1 on thesemiconductor testing device 10A is very simple and easily performed.

Further, as mentioned above, each connection portion 24A with which arespective one of the bumps 2 is connected is deformable. Accordingly,even if the sizes (heights) of the bumps 2 vary, as a result of theconnection portions 24A being deformed, the variation of the heights ofthe bumps 2 is accommodated, and thus, it is possible that all the bumps2 are positively connected with the connection portions 24A (contactmembers 18), respectively. Thus, the reliability of the test can beimproved.

Further, as shown in FIG. 1, each connection portion 24A is deformedwhen the connection portions 24A are connected with the bumps 2,respectively. During the deformation of the connection portions 24A, thebumps 2 slide on the connection portions 24A. Thereby, even if an oxidefilm and/or dust are present on the surfaces of the bumps 2 and theconnection portions 24A, the oxide film and/or dust are removed as aresult of the sliding contact. Such an effect is called a wiping effect.

Thereby, it is possible to make the surfaces of the bumps 2 and theconnection portions 24A clean when the semiconductor device 1 is loadedon the semiconductor testing device 10A. As a result, it is possible toimprove the test accuracy. Further, when the semiconductor device 1 ismounted on a circuit substrate after the test, the reliability of theelectrical connection between the semiconductor device 1 and the circuitsubstrate can be improved.

Further, as shown in FIG. 1, each connection portion 24A is deformedalong the outer surface of a respective one of the bumps 2 when thesemiconductor device 1 is loaded on the semiconductor testing device10A. Thereby, the contact area between the connection portion 24A andthe bump 2 increases. Thus, it is possible to ensure the electricalconnection therebetween. The above-mentioned effects/advantages providedin the first embodiment are similarly provided in each of the otherembodiments described later.

FIG. 3 shows an arrangement in which the semiconductor testing device10A is applied to a testing socket 30A which is used when thesemiconductor device 1 is tested. The semiconductor testing device 10Ais set in a body portion 32 of the testing socket 30A. A lid portion 34is rotatably supported on the body portion 32 by a shaft 36. This lidportion 34 is locked in a closed position by a locking pin 38. FIG. 3shows the condition in which the lid portion 34 is locked in the closedposition.

In this locked condition, the lid portion 34 presses the semiconductordevice 1 onto the semiconductor testing device 10A. Thereby, asdescribed above, the bumps 2 formed on the semiconductor device 1 areconnected with the connection portions 24A formed on the semiconductortesting device 10A. The semiconductor testing device 10A is connectedwith the testing board 40 through the terminal portions 22 and theconnection pins 42. In this condition, a predetermined test can beperformed on the semiconductor device 1 through the testing board 40.

The semiconductor testing device 10A in the first embodiment can beapplied not only to the test of the semiconductor device 1 using thearrangement shown in FIG. 3 but also to wafer contactors 44A and 44Bshown in FIGS. 4 and 5, respectively.

These wafer contactors 44A and 44B are used when a test is performed ona wafer 3 on which a predetermined electronic circuit is formed and thenbumps 2 are formed. Each of the wafer contactors 44A and 44B includes awafer holder 46 for holding the wafer 3 and a base 48.

The wafer 3 is set in the wafer holder 46 in a position in which thebumps 2 of the wafer 3 project upward, and then, the semiconductortesting device 10A is loaded on the wafer 3. Then, the base 48 is placedon the semiconductor testing device 10A. Hooks 47, projecting downwardlyfrom the base 48, pass through through holes formed in the wafer holder46, and the projecting ends of the hooks 47 engage with the bottomsurface of the wafer holder 46. Thus, the base 48 is locked with thewafer holder 46. Thereby, the base 48 presses the semiconductor testingdevice 10A onto the wafer 3. When the locking of the base 48 with thewafer holder 46 is released, each of the hooks 47 is laterally bent andthereby, the engagement between the bottom surface of the wafer holder46 and the projecting end of the hook 47 is released.

Because the base 48 is smaller than the wafer holder 46, the terminalportions 22 of the semiconductor testing device 10A are externallyexposed. In the wafer contactor 44A shown in FIG. 4, contacts 50 areelectrically connected with the exposed terminal portions 22,respectively. In the wafer contactor 44B shown in FIG. 5, connector 52is electrically connected with the exposed terminal portions 22. In thiscondition, a test is performed on the wafer 3. Thus, the semiconductortesting device 10A can also be applied to the test of the wafer 3 in thearrangements shown in FIG. 4 and FIG. 5. In each of the arrangementsshown in FIGS. 4 and 5, advantages similar to those described above canbe provided. This can also be said for the other embodiments describedlater.

A second embodiment of the present invention will now be described.

FIGS. 6A and 6B show a semiconductor testing device 10B in the secondembodiment of the present invention. FIG. 6A shows a side sectionalelevation view of part of the semiconductor testing device 10B. FIG. 6Bshows a bottom view of part of the semiconductor testing device 10B. InFIGS. 6A and 6B, for the components/parts identical to those of thesemiconductor testing device 10A shown in FIGS. 1 and 2, the samereference numerals are given and the descriptions thereof will beomitted. Hereinafter, although each semiconductor testing device has aplurality of contact members 18, descriptions will be made mainly foronly one contact member 18 for the sake of simplification ofdescriptions.

In the semiconductor testing device 10B in the second embodiment, aconnection portion 24B extends from only one side of the opening 16 soas to have a cantilever-like shape. Further, a roughened surface 25 isformed at least at an area of the connection portion 24B, at which areathe connection portion 24B is connected with the bump 2.

As a result of the connection portion 24B having the cantilever-likeshape, possible deformation of the connection portion 24B can beincreased. Thereby, even if the variation in the heights of the bumps 2is large, this can be easily accommodated. Thereby, a highly reliabletest can be performed. Further, because the possible deformation of theconnection portion 24B is large, the contact area between the connectionportion 24B and the bump 2 increases. Thus, it is possible to ensure theelectrical connection therebetween.

Further, also by forming the roughened surface 25 at least at the areaat which the connection portion 24 is connected with the bump 2, it ispossible to ensure the electrical connection therebetween. The roughenedsurface 25 has minute unevenness thereon, and thus, the effectivesurface area is large. When the bump 2 comes into contact with theconnection portion 24B, the minute projections of the roughened surfaceprotrude into the bump 2. Thereby, electrical connection between theconnection portion 24B and the bump 2 can be ensured.

The roughened surface 25 is formed by, for example, a method of treatingthe surface of the connection portion 24B with chemicals, by blasting orthe like.

A third embodiment of the present invention will now be described.

FIGS. 7A and 7B show a semiconductor testing device 10C in the thirdembodiment of the present invention. FIG. 7A shows a side sectionalelevation view of part of the semiconductor testing device 10C. FIG. 7Bshows a bottom view of part of the semiconductor testing device 10C.Also in FIGS. 7A and 7B, for the components/parts identical to those ofthe semiconductor testing device 10A shown in FIGS. 1 and 2, the samereference numerals are given and the descriptions thereof will beomitted.

In the semiconductor testing device 10C in the third embodiment, aconnection portion 24C includes one pair of cantilever portions 56.Specifically, the connection portion 24C includes a ring portion 54,and, as shown in FIG. 7B, the pair of cantilever portions 56 extend fromopposite sides of the ring portion 54 toward the center of the ringportion.

The possible amount of deformation of the cantilever portions 56, whenthe semiconductor device 1 is loaded on the semiconductor testing device10C and the bump 2 presses the cantilever portions 56, is larger thanthe case of the connection portion 24A in the first embodiment, and issmaller than the case of the connection portion 24B in the secondembodiment. Accordingly, when the heights of the bumps 2 vary, one ofthe first, second and third embodiments may be appropriately selected.

Further, in the third embodiment, since the cantilever portions 56 comeinto contact with the bump 2 on two sides as shown in FIG. 7A, it ispossible to hold the bump 2 more stably in comparison to the case of thesecond embodiment. Further, in comparison to the first embodiment, themechanical strength of the connection portion 24C can be increased, andthus, occurrence of plastic deformation of the connection portion 24Ccan be prevented.

A fourth embodiment of the present invention will now be described.

FIGS. 8A and 8B show a semiconductor testing device 10D in the fourthembodiment of the present invention. FIG. 8A shows a side sectionalelevation view of part of the semiconductor testing device 10D. FIG. 8Bshows a bottom view of part of the semiconductor testing device 10D.Also in FIGS. 8A and 8B, for the components/parts identical to those ofthe semiconductor testing device 10A shown in FIGS. 1 and 2, the samereference numerals are given and the descriptions thereof will beomitted.

In the second embodiment, the connection portion 24B has a flat-platecantilever shape. In contrast to this, in the semiconductor testingdevice 10D in the fourth embodiment, a connection portion 24D is aforked cantilever portion 58. In comparison to the connection portion24B in/the second embodiment, the connection portion 24D is more likelyto be deformed. Thereby, the variation of the heights of the bumps 2 canbe effectively accommodated.

However, because the connection portion 24D is likely to be deformed, ina case where the contact member 18 is made of copper (Cu), plasticdeformation of the connection portion 24D is likely to occur.Accordingly, in the fourth embodiment, it is preferable that the contactportion 18 (including the connection portion 24D) is made of a materialwhich has elasticity and also high electric conductivity.

A fifth embodiment of the present invention will now be described.

FIGS. 9A and 9B show a semiconductor testing device 10E in the fifthembodiment of the present invention. FIG. 9A shows a side sectionalelevation view of part of the semiconductor testing device 10E. FIG. 9Bshows a bottom view of part of the semiconductor testing device 10E.Also in FIGS. 9A and 9B, for the components/parts identical to those ofthe semiconductor testing device 10A shown in FIGS. 1 and 2, the samereference numerals are given and the descriptions thereof will beomitted.

In the semiconductor testing device 10B-10D in the second through fourthembodiments, each of the connection portions 24B-24D has a cantilevershape. In contrast to this, in the semiconductor testing device 10E inthe fifth embodiment, a connection portion 24E includes a portion 60supported on both ends. Each of the both ends of the portion 60 isintegrally connected with a ring portion 54.

By using the portion 60 supported on both ends, the mechanical strengthof the connection portion 20E can be increased. Thereby, the connectionportion 20E can be prevented from being degraded due to long-term use.

A sixth embodiment of the present invention will now be described.

FIGS. 10A and 10B show a semiconductor testing device 10F in the sixthembodiment of the present invention. FIG. 10A shows a side sectionalelevation view of part of the semiconductor testing device 10F. FIG. 10Bshows a bottom view of part of the semiconductor testing device 10F.Also in FIGS. 10A and 10B, for the components/parts identical to thoseof the semiconductor testing device 10A shown in FIGS. 1 and 2, the samereference numerals are given and the descriptions thereof will beomitted.

In the sixth embodiment, a connection portion 24F is obtained as aresult of forming an opening 63 at the center line of the portion 60 ofthe connection portion 24E in the fifth embodiment. Thus, a pair ofportions 62, each supported at both ends, are formed.

By forming the pair of portions 62 in the connection portion 24F, theamount of deformation of the portions 62 can be increased. Thereby,variation in the heights of the bumps 2 can be effectively accommodated.

Further, by providing the opening 63 between the portions 62, thebottom-end portion of the bump 2 is located in the opening 63. Thereby,movement of the bump 2 on the connection portion 24F can be prevented.Accordingly, the semiconductor device 1 can be positively positioned onthe semiconductor testing device 10F.

A seventh embodiment of the present invention will now be described.

FIGS. 11A and 11B show a semiconductor testing device 10G in the seventhembodiment of the present invention. FIG. 11A shows a side sectionalelevation view of part of the semiconductor testing device 10G. FIG. 11Bshows a bottom view of part of the semiconductor testing device 10G.Also in FIGS. 11A and 11B, for the components/parts identical to thoseof the semiconductor testing device 10A shown in FIGS. 1 and 2, the samereference numerals are given and the descriptions thereof will beomitted.

In the above-described first embodiment, the cross-shaped opening 26A isformed at the center of the connection portion 24A so that theconnection portion 24A is deformable. In contrast to this, in theseventh embodiment, a straight-line slit 26B is formed in a connectionportion 24G of the semiconductor testing device 10G so that theconnection portion 24G is deformable.

The possible amount of deformation of the connection portion 24G in theseventh embodiment is less than the possible amount of deformation ofthe connection portion 24A in the first embodiment. However, themechanical strength of the connection portion 24G is higher than that ofthe connection portion 24A. Accordingly, in accordance with the materialof the bump 2 (for example, whether the bump 2 is made of solder orgold, and so forth), an appropriate one of the slits 26A and 26B may beselected.

In the seventh embodiment, the connection portion can be easilydeformed. As a result, the variation of the heights of the bumps can beaccommodated as a result of the connection portion being appropriatelydeformed. Further, because the contact area between the connectionportion and the bump is increased, a positive electrical connection canbe provided.

An eighth embodiment of the present invention will now be described.

FIGS. 12A and 12B show a semiconductor testing device 10H in the eighthembodiment of the present invention. FIG. 12A shows a side sectionalelevation view of part of the semiconductor testing device 10H. FIG. 12Bshows a bottom view of part of the semiconductor testing device 10H.Also in FIGS. 12A and 12B, for the components/parts identical to thoseof the semiconductor testing device 10A shown in FIGS. 1 and 2, the samereference numerals are given and the descriptions thereof will beomitted.

In the eighth embodiment, a circular opening 26C is formed at the centerof a connection portion 24H. The possible amount of deformation of theconnection portion 24H is less than that of the connection portion 24Gin the seventh embodiment, while the mechanical strength of theconnection portion 24H is higher than the connection portion 24G.Accordingly, as mentioned above, an appropriate one of the slits 26A,26B and the opening 26C may be selected. Further, in the eighthembodiment, because the opening 26C is located at the center of theconnection portion 24H and also has a circular shape, the bump 2 isalways located at the center of the connection portion 24H. Accordingly,the semiconductor device 1 can be positively positioned on thesemiconductor testing device 10H.

In the eighth embodiment, the connection portion can be easily deformed.As a result, the variation of the heights of the bumps can beaccommodated as a result of the connection portion being appropriatelydeformed. Further, because the contact area between the connectionportion and the bump is increased, a positive electrical connection canbe provided.

A ninth embodiment of the present invention will now be described.

FIGS. 13A and 13B show a semiconductor testing device 10I in the ninthembodiment of the present invention. FIG. 13A shows a side sectionalelevation view of part of the semiconductor testing device 10I. FIG. 13Bshows a bottom view of part of the semiconductor testing device 10I.Also in FIGS. 13A and 13B, for the components/parts identical to thoseof the semiconductor testing device 10A shown in FIGS. 1 and 2, the samereference numerals are given and the descriptions thereof will beomitted.

In the ninth embodiment, many small-diameter circular openings 26D areformed in a connection portion 24I. By forming a large number ofcircular openings 26D in the connection portion 24I, similar to theabove-described embodiments, the connection portion 24I is deformable.The possible amount of deformation can be adjusted by appropriatelyselecting the number of the circular openings 26D and the diameter ofeach circular opening 26D.

Further, by forming the large number of circular openings 26D, when thebump 2 is pressed onto the connection portion 24I, the edge of eachcircular opening 26D cuts into the bump 2. Therefore, the connectionportion 24I provides an effect the same as that provided by theroughened surface 25 of the second embodiment. Thereby, electricalconnection between the connection portion 24I and the bump 2 can beensured.

In the ninth embodiment, the connection portion can be easily deformed.As a result, the variation of the heights of the bumps can beaccommodated as a result of the connection portion being appropriatelydeformed. Further, because the contact area between the connectionportion and the bump is increased, a positive electrical connection canbe provided.

A tenth embodiment of the present invention will now be described.

FIGS. 14A and 14B show a semiconductor testing device 10J in the tenthembodiment of the present invention. FIG. 14A shows a side sectionalelevation view of part of the semiconductor testing device 10J. FIG. 14Bshows a bottom view of part of the semiconductor testing device 10J.Also in FIGS. 14A and 14B, for the components/parts identical to thoseof the semiconductor testing device 10A shown in FIGS. 1 and 2, the samereference numerals are given and the descriptions thereof will beomitted.

In each of the above-described embodiments, the connection portion isintegrally formed in the contact member 18. In contrast to this, in thetenth embodiment, a direct-contact part 64 of a connection portion 24Jis a member different from the other portion of the contact member 18.

By using the different member as the direct-contact part 64 of theconnection portion 24J, it is possible to separately select the materialof the contact member 18 and the material of the direct-contact part 64.Accordingly, it is possible to select a material that is optimum for thefunction of the contact member 18 and to select a material that isoptimum for the function of the direct-contact part 64.

In the semiconductor testing device 10J in the tenth embodiment, inorder to set the possible amount of deformation of the direct-contactpart 64 of the connection portion 24J to be large, the direct-contactpart 64 is a foil-like terminal. In the tenth embodiment, the foil-liketerminal 64 (direct-contact part) is made of aluminum (Al), and theother portion of the contact member 18 is made of copper (Cu).

An eleventh embodiment of the present invention will now be described.

FIGS. 15A and 15B show a semiconductor testing device 10K in theeleventh embodiment of the present invention. FIG. 15A shows a sidesectional elevation view of part of the semiconductor testing device10K. FIG. 15B shows a bottom view of part of the semiconductor testingdevice 10K. Also in FIGS. 15A and 15B, for the components/partsidentical to those of the semiconductor testing device 10A shown inFIGS. 1 and 2, the same reference numerals are given and thedescriptions thereof will be omitted.

In the eleventh embodiment, similar to the tenth embodiment, aconnection portion 24K is a member different from the other portion ofthe contact member 18. The connection portion 24K is a direct-contactpart which is a cantilever-shaped wire 66.

The cantilever-shaped wire 66 is formed using the wire-bondingtechnique. Specifically, wire bonding is performed at a position on thecontact member 18 in proximity to the opening 16 using a wire-bondingapparatus. Then, after a predetermined length of wire is pulled out, thewire is cut. As a result, the wire is in a condition indicated by thebroken line in FIG. 15A.

Then, the wire is bent to the side of the opening 16. Thus, thecantilever-shaped wire 66 is formed (indicated by the solid line in FIG.15A). By forming the connection portion 24K using the wire-bondingtechnique, the connection portion 24K is easily and efficiently formed,and also, the cost can be reduced.

Further, in the eleventh embodiment, the connection portion 24K is thecantilever-shaped wire 66, one end of the wire 66 being fixed and theother end of the wire 66 being free. Thereby, the possible amount ofdeformation of the cantilever-shaped wire 66 is relatively large. As aresult, even if the variation of the heights of the bumps 2 is large,the variation can be accommodated.

A twelfth embodiment of the present invention will now be described.

FIGS. 16A and 16B show a semiconductor testing device 10L in the twelfthembodiment of the present invention. FIG. 16A shows a side sectionalelevation view of part of the semiconductor testing device 10L. FIG. 16Bshows a bottom view of part of the semiconductor testing device 10L.Also in FIGS. 16A and 16B, for the components/parts identical to thoseof the semiconductor testing device 10A shown in FIGS. 1 and 2, the samereference numerals are given and the descriptions thereof will beomitted.

Also in the twelfth embodiment, similar to the above-described eleventhembodiment, a direct-contact part 68 of the connection portion 24L is awire. Although the connection portion 24K is the cantilever-shaped wire66 in the eleventh embodiment, the direct-contact part 68 of theconnection portion 24L is a wire supported at both ends in the twelfthembodiment.

The wire 66 supported at both ends is formed also using the wire-bondingtechnique. Specifically, first bonding is performed at a position on aframe portion 54 of the connection portion 24L in proximity to theopening 16. Then, after the wire is pulled out a predetermined length,second bonding is performed at a position on the frame portion 54opposite to the position of the first bonding. Thereby, each of the bothends of the wire 68 is fixed to the frame portion 54. The mechanicalstrength of the connection portion 24L in the twelfth embodiment ishigher than that of the connection portion 24L in the eleventhembodiment.

A thirteenth embodiment of the present invention will now be described.

FIG. 17 shows a bottom view of part of a semiconductor testing device10M in the thirteenth embodiment of the present invention. Also in FIG.17, for the components/parts identical to those of the semiconductortesting device 10A shown in FIGS. 1 and 2, the same reference numeralsare given and the descriptions thereof will be omitted.

In the connection portion 24M of the semiconductor testing device 10M,two of the wires 68, each supported at both ends, as described above forthe twelfth embodiment, are used. The two wires 68 are arranged so as toform a cross as shown in FIG. 17. In this arrangement in the thirteenthembodiment, the effect provided by the twelfth embodiment can also beprovided, and also, in comparison to the arrangements of the eleventhand twelfth embodiments shown in FIGS. 15A, 15B, 16A and 16B, movementof the bump 2 can be prevented. Thereby, the semiconductor device 1 canbe positively positioned on the semiconductor testing device 10M.

A fourteenth embodiment of the present invention will now be described.

FIG. 18 shows part of a semiconductor testing device 10N in thefourteenth embodiment of the present invention. Also in FIG. 18, for thecomponents/parts identical to those of the semiconductor testing device10A shown in FIGS. 1 and 2, the same reference numerals are given andthe descriptions thereof will be omitted.

In the above-described respective embodiments, basically, each of thesemiconductor testing devices 10A-10M includes the insulating substrate14 and the contact member 18. In contrast to this, in the semiconductortesting device 10N in the fourteenth embodiment, in addition to theinsulating substrate 14 and the contact member 18, a reinforcementmember 70A is provided.

The reinforcement member 70A is made of an elastic member having aninsulating property (for example, rubber, flexible resin, or the like).Specifically, a holder 72 is provided in this embodiment. Thereinforcement member 70A is provided on the holder 72, and then, thecontact member 18 and the insulating substrate 14 are stacked in thestated order.

In order to accommodate the variation of the heights of the bumps 2, itis necessary to form each connection portion 24 to be thin. The contactmember 18 is supported on the insulating substrate 14 except for thepositions at which the contact member 18 faces the openings 16. Thus,the mechanical strength of the contact member 18 is ensured.

It is necessary that the connection portions 24 are electricallyconnected with the bumps 2. For this purpose, the openings 16 are formedin the insulating substrate 14 at the positions at which the insulatingsubstrate 14 faces the bumps 2. As a result, the thin connectionportions 24 are exposed through the openings 16. Thus, the mechanicalstrength of the connection portions 24 is decreased.

In the fourteenth embodiment, the reinforcement member 70A supports theconnection portions 24. Thereby, even if a strong force is applied tothe connection portions 24, the reinforcement member 70A protects theconnection portions 24. Thereby, plastic deformation of the connectionportions 24 can be prevented. Therefore, a stable test can be alwaysperformed.

Further, in the fourteenth embodiment, the holder 72 is provided underthe semiconductor testing device 10N. This holder 72 is made of amaterial having a low elastic deformation rate, such as, for example,metal, hard resin or the like. The holder 72 is provided under thereinforcement member 70A, and supports the reinforcement member 70A.

As a result of providing the holder 72 for supporting the reinforcementmember 70A, even if elastic deformation of the reinforcement member 70Aoccurs when the semiconductor device 1 is loaded on the semiconductortesting device 10N, excessive deformation of the reinforcement member70A and shifting of the reinforcement member 70A from a predeterminedposition can be prevented. Thereby, a stable electrical connectionbetween the connection portions 24 and the bumps 2 can be provided.

A fifteenth embodiment of the present invention will now be described.

FIG. 19 shows part of a semiconductor testing device 10P in thefifteenth embodiment of the present invention. In FIG. 19, for thecomponents/parts identical to those of the semiconductor testing devices10A and 10N in the first and fourteenth embodiments, shown in FIGS. 1, 2and 18, the same reference numerals are given and the descriptionsthereof will be omitted.

In the semiconductor testing device 10P in the fifteenth embodiment,projections 74 are formed on a reinforcement member 70B at positions atwhich the reinforcement member 70B faces the connection portions 24.

By forming the projections 74 on the reinforcement member 70B at thepositions at which the reinforcement member 70B faces the connectionportions 24, the projections 74 are mainly deformed and the otherportion of the reinforcement member 70B is not much deformed, when astrong force is applied to the connection portions 24. As a result,excessive deformation of the reinforcement member 70B and shifting ofthe reinforcement member 70B from a predetermined position can beprevented.

In each of the arrangements shown in FIGS. 18 and 19, when theconnection portions 24 are deformed as a result of an external forcebeing applied to the connection portions 24, the reinforcement member70A or 70B, which is in contact with the connecting portions 24,prevents excess deformation of the connection portions 24. Thus, theconnection portions 24 are well protected.

A sixteenth embodiment of the present invention will now be described.

FIG. 20 shows part of a semiconductor testing device 10Q in thesixteenth embodiment of the present invention. In FIG. 20, for thecomponents/parts identical to those of the semiconductor testing devices10A and 10N in the first and fourteenth embodiments, shown in FIGS. 1, 2and 18, the same reference numerals are given and the descriptionsthereof will be omitted.

In the semiconductor testing device 10Q in the sixteenth embodiment,reverse-conical depressions 76 are provided on the reinforcement member70C at the positions at which the reinforcement member 70C faces theconnection portions 24.

By forming the reverse-conical depressions 76 on the reinforcementmember 70C at the positions at which the reinforcement member 70C facesthe connection portions 24, in addition to the openings 16 formed in theinsulating substrate 14, positioning of the bumps 2 can be performedusing the reverse-conical depressions 76. Accordingly, positioning ofthe semiconductor device 1 with respect to the semiconductor testingdevice 10Q can be positively performed.

Because of the shape of the reverse-conical depression 76, the wallthereof is a taper surface. Accordingly, in comparison to a cylindricaldepression or a rectangular depression each having a vertical wall, theconnection portion 24 immediately comes into contact with thereinforcement member 70C when the connection portion 24 is deformed.Thereby, it is possible to prevent plastic deformation of the connectionportion 24.

A seventeenth embodiment of the present invention will now be described.

FIG. 21 shows part of a semiconductor testing device 10R in theseventeenth embodiment of the present invention. In FIG. 21, for thecomponents/parts identical to those of the semiconductor testing devices10A and 10N in the first and fourteenth embodiments, shown in FIGS. 1, 2and 18, the same reference numerals are given and the descriptionsthereof will be omitted.

The semiconductor testing device 10R in the seventeenth embodiment usesan anisotropic conductive rubber as a reinforcement member 70D. Theanisotropic conductive rubber is made as a result of mixing conductivemetal powder into a flexible insulating material, and hascharacteristics of having conductivity in a pressed direction, that is,in the direction of a force application.

Accordingly, by using the anisotropic conductive rubber as thereinforcement member 70D, the reinforcement member 70D has twofunctions. The first function is to mechanically reinforce theconnection portions 24. The second function is to electrically connectthe connection portions 24 with pads 78 provided on the testing board40. Thereby, plastic deformation of the connection portions 24 can beprevented by the mechanically reinforcing function, and also, variouskinds of wiring of the semiconductor testing device 10R can be performedby the electrically conductive function.

An eighteenth embodiment of the present invention will now be described.

FIG. 22A shows a side sectional elevation view of part of asemiconductor testing device 10S in the eighteenth embodiment of thepresent invention. FIG. 22B shows a bottom view of part of thesemiconductor testing device 10S. In FIGS. 22A and 22B, for thecomponents/parts identical to those of the semiconductor testing devices10A and 10N in the first and fourteenth embodiments, shown in FIGS. 1, 2and 18, the same reference numerals are given and the descriptionsthereof will be omitted.

In the semiconductor testing device 10S in the eighteenth embodiment, aplurality of long and narrow through holes or slots 80 are formed in areinforcement member 70E. The holes or slots 80 are formed approximatelyparallel with each other as shown in FIG. 22B.

By forming the long and narrow through holes or slots 80 in thereinforcement member 70E, when the reinforcement member 70E is deformedas a result of the bumps 2 pressing the connection portions 24, thedeformation is absorbed as a result of the long and narrow through holesor slots 80 being deformed. That is, when deformation occurs in portions81A, 81B and 81C which are defined by the long and narrow holes or slots80, the deformation of each portion does not interact with the adjacentportions. Thereby, electrical connection between the connection portions24 and the bumps 2 can be positively ensured.

A nineteenth embodiment of the present invention will now be described.

FIG. 23 shows a bottom view of part of a semiconductor testing device10T in the nineteenth embodiment of the present invention. In FIG. 23,for the components/parts identical to those of the semiconductor testingdevices 10A and 10N in the first and fourteenth embodiments, shown inFIGS. 1, 2 and 18, the same reference numerals are given and thedescriptions thereof will be omitted.

In the semiconductor testing device 10T in the nineteenth embodiment, anet-shaped elastic member is used as a reinforcement member 70F. Thisnet-shaped elastic member 70F is made from, for example, elastic wires(insulating wires) which are woven to have a net shape. Therefore, thereinforcement member 70F is flexibly deformed when a pressing force isapplied thereto. This reinforcement member 70F is provided on the entirebottom surface of the insulating substrate 14 including the bottomsurfaces of the connection portions 24.

In the nineteenth embodiment, by using the net-shaped elastic member asthe reinforcement member 70F, in comparison to the arrangements of thefourteenth through eighteenth embodiments shown in FIGS. 18-22B, a spacerequired for providing the reinforcement member 70F can be reduced.Thereby, the semiconductor testing device 10T can be miniaturized.Further, in comparison to the block-shaped reinforcement members70A-70E, the cost can also be reduced.

A twentieth embodiment of the present invention will now be described.

FIG. 24 shows a side sectional elevation view of part of a semiconductortesting device 10U in the twentieth embodiment of the present invention.In FIG. 24, for the components/parts identical to those of thesemiconductor testing devices 10A and 10N in the first and fourteenthembodiments, shown in FIGS. 1, 2 and 18, the same reference numerals aregiven and the descriptions thereof will be omitted.

In the twentieth embodiment, a balloon-shaped member which contains airor a liquid is used as a reinforcement member 70G. In this embodiment,the balloon-shaped member contains air. The balloon-shaped member 7OG isconnected to, for example, an air supply means such as an air pump. Airis supplied to the balloon-shaped reinforcement member 70G by the airsupply means. This balloon-shaped reinforcement member 70G is providedin a depression formed in a holder 72. The insulating substrate 14 withthe contact member 18 is placed on the balloon-shaped reinforcementmember 70G, as shown in the figure.

In the above-described semiconductor testing device 10U, by adjustingthe amount of air contained in the balloon-shaped reinforcement member70G, the elastic force of the balloon-shaped reinforcement member 70Gcan be adjusted. Thereby, it is possible to set the elastic force of theballoon-shaped reinforcement member 70G to be appropriate foraccommodating the variation of the heights of the bumps 2 and plasticdeformation of the connection portions 24 can be prevented.

Further, by intentionally increasing and decreasing the internalpressure of the balloon-shaped reinforcement member 70G after the bumps2 are connected to the connection portions 24, the connection portions24 slide on the bumps 2, respectively. Thereby, even if oxide filmand/or dust are present on the surfaces of the bumps 2 and theconnection portions 24, the oxide film and/or dust are removed as aresult of the wiping effect provided by the sliding movement. Thereby,it is possible to make the surfaces of the bumps 2 and the connectionportions 24 be in a good condition.

A twenty-first embodiment of the present invention will now bedescribed.

FIG. 25 shows the twenty-first embodiment. In this embodiment, thesemiconductor testing device 10U in the twentieth embodiment shown inFIG. 24 is applied to a testing socket 30B. In FIG. 25, for thecomponents/parts identical to those of the semiconductor testing devices10A and 10U in the first and twentieth embodiments, shown in FIGS. 1, 2and 24, the same reference numerals are given and the descriptionsthereof will be omitted.

As shown in FIG. 25, the balloon-shaped reinforcement member 70G of thesemiconductor testing device 10U is contained in the depression formedin the holder 72 which is a part of the testing socket 30B. The testingsocket 30B includes a lid portion 34 which is rotatably supported by abase member, which is fixed on a testing board 40, through a shaft 36.The lid portion 34 can be locked in the closed position by a locking pin(not shown in the figure). FIG. 25 shows the closed position of the lidportion 34.

In this locked state, the lid portion 34 presses the semiconductordevice 1 onto the semiconductor testing device 10U. Thereby, asdescribed above, the bumps 2 formed on the semiconductor device 1 areconnected with the connection portions 24 formed on the semiconductortesting device 10U. The semiconductor testing device 10U is connectedwith the testing board 40 through the terminal portions 22 and contacts84. In this condition, a predetermined test can be performed on thesemiconductor device 1 through the testing board 40.

A pipe 86, which is connected with a high-pressure air source, isconnected with the balloon-shaped reinforcement member 70G. At a middleposition of the pipe 86 between the high-pressure air source and theballoon-shaped reinforcement member 70G, a valve device 88 is provided.This valve device 88 is, for example, a three-way valve. The valvedevice can switch the mode thereof between a mode (hereinafter, referredto as a ‘supply mode’) in which high-pressure air is supplied to theballoon-shaped reinforcement member 70G and a mode (hereinafter,referred to as a ‘discharge mode’) in which air in the balloon-shapedreinforcement member 70G is discharged.

By appropriately switching the mode of the valve device 88 between thesupply mode and the discharge mode as a result of controlling the valvedevice 88, it is possible to control the internal pressure of theballoon-shaped reinforcement member 70G to a desired pressure, and theabove-mentioned wiping effect can be provided.

A twenty-second embodiment of the present invention will now bedescribed.

FIG. 26 shows a side sectional elevation view of part of a semiconductortesting device 10V in the twenty-second embodiment of the presentinvention. In FIG. 26, for the components/parts identical to those ofthe semiconductor testing device 10A in the first embodiment, shown inFIGS. 1 and 2, the same reference numerals are given and thedescriptions thereof will be omitted.

In the semiconductor testing device 10V in the twenty-second embodiment,an insulating substrate 14A on which a contact member 18A is providedand an insulating substrate 14B on which a contact member 18B isprovided are stacked with one another.

By using such a stacked-layer arrangement, a connection portion 24P ofthe contact member 18A is used for connecting with a bump 2A, aconnection portion 24N of the contact member 18B is used for connectingwith a bump 2B, and so forth. Thus, it is possible to reduce the numberof bumps 2 (2A, 2B) which are connected with each layer (with theconnection portions of each insulating substrate).

Thereby, variable wiring arrangements of the contact member 18A or 18Bof each layer (on each insulating substrate 14A or 14B) can be provided.Accordingly, for the semiconductor device 1 which is of high density andhas many bumps 2, an adequate semiconductor testing device 10V can beprovided.

FIGS. 27A, 27B and 28 show a semiconductor testing device 110A in atwenty-third embodiment of the present invention. FIGS. 27A and 27Billustrate the arrangement and operation of the semiconductor testingdevice 110A. FIG. 28 shows a condition in which a contactor 111 isseparate from a wiring substrate 115A.

As shown in the respective figures, in general, the semiconductortesting device 110A includes the contactor 111 and the wiring substrate115A. A semiconductor device 120 is loaded on the semiconductor testingdevice 110A, a spherical connection terminal (referred to as a bump,hereinafter) 121 provided on the semiconductor device 120 iselectrically connected with the semiconductor testing device 110A, and apredetermined test is performed on the semiconductor device 120 throughthe semiconductor testing device 110A.

In general, the contactor 111 includes a contact portion 112A, and aninsulating substrate 113. The contact portion 112A is a tongue-shapedmember, and, is formed of an elastically deformable conductive metalfilm such as a copper (Cu), an alloy of copper, or the like, forexample. The contact portion 112A is provided at a position facing thebump 121 provided on the semiconductor device 120.

One end portion of the contact portion 112A is fixed to the insulatingsubstrate 113, which will be described later, and the other end portionof the contact portion 112A extends on an opening 114 which is formed inthe insulating substrate 113. Therefore, the contact portion 112A issupported and extends like a cantilever on the opening 114.Approximately the middle of the contact portion 112A is a connectionportion 124A with which the bump 121 is connected.

The insulating substrate 113 is a single-layer, sheet-shaped resinsubstrate made of a resin, having the property of insulation, such aspolyimide (PI) or the like, for example. The above-described contactportion 112A is formed on the top of the insulating substrate 113, andis supported by the insulating substrate 113. The opening 114 mentionedabove is formed in the insulating substrate 113 at a position facing thecontact portion 112. Forming of the contact portion 112A on theinsulating substrate 113 can be performed easily at a low cost, becausea technique of manufacturing a flexible substrate or the like can beused.

The insulating substrate may comprise a flexible film made of resin andhaving the property of insulation, and the contact portion may comprisea conductive metal layer having flexibility.

The wiring substrate 115A has a multilayer substrate arrangement, andincludes a plurality (two, in the embodiment) of insulating layers 116A,116B, and an internal connection terminal 117 (first connectionterminal), an external connection terminal 118 (second connectionterminal) and an interposer 119, which are formed in the insulatinglayers 116A, 116B, and so forth.

The insulating layers 116A, 116B are made of an insulating material suchas glass epoxy or the like, for example. Further, the internalconnection terminal 117, external connection terminal 118 and interposer119 are formed through a plating technique, for example, in theinsulating layers 116A, 116B. As the material of the internal connectionterminal 117, external connection terminal 118 and interposer 119, acopper (Cu) is used.

The internal connection terminal 117 is formed on the surface (referredto as a top surface, hereinafter) of the wiring substrate 115A, on whichsurface the contactor 111 is loaded, at a position facing the contactportion 112A provided on the contactor 111. Accordingly, in thecondition in which the contactor 111 is loaded on the wiring substrate115A, the internal connection terminal 117 faces the contact portion112A via the opening 114.

The external connection terminal 118 is formed on the surface (referredto as a bottom surface, hereinafter) opposite to the above-mentioned topsurface of the wiring substrate 115A. The external connection terminal118 is a terminal which is used for connecting the semiconductor testingdevice 110A with a semiconductor tester or the like which performs anoperation test on the semiconductor device 120.

The interposer 119 is used for electrically connecting the internalconnection terminal 117 with the external connection terminal 118. Theinterposer 119 includes a plurality of internal electric wires 119A,119B and 119C. As a result of the internal connection terminal 117 andthe external connection terminal 118 being connected with one anotherthrough the interposer 119, it is possible to improve flexibility in theposition at which the internal connection terminal 117 is formed and theposition at which the external connection terminal 118 is formed, suchthat these positions can be set arbitrarily.

The operation of the above-described semiconductor testing device 110Aat a time of test will now be described. FIG. 27A shows a conditionbefore the semiconductor device 120 is loaded on the semiconductortesting device 110A. In this embodiment, because the contact portion112A has a cantilever-like arrangement, the contact portion 112A extendsapproximately straightly over the opening 114 before the semiconductordevice 120 is loaded on the semiconductor testing device 110A.(Hereinafter, the condition shown in FIG. 27A will be referred to as abefore-loaded condition.)

When the semiconductor device 120 is loaded on the semiconductor testingdevice 110A in the before-loaded condition, during the loading process,the bump 121 is inserted into the opening 114. As a result, the contactportion 112A, which is made of an elastic material and has acantilever-like arrangement, is elastically deformed, as shown in FIG.27B, and, thus, the extending end 125 of the contact portion 112A comesinto contact with the internal connection terminal 117 of the wiringsubstrate 115A. Thereby, the bump 121 is electrically connected with theexternal connection terminal 118 via the contact portion 112A, internalconnection terminal 117 and interposer 119.

A plurality of contact portions 112A, which are provided on theinsulating substrate 113 for a plurality of bumps 121 of thesemiconductor device 120, respectively, are formed independently.Therefore, when the bumps 121 are inserted into the insulating substrate113, the respective contact portions 112A are lowered independently. Asa result, even when there is variation in the heights of the bumps 121,the respective contact portions 112A are deformed in proportion to theindividual heights of the bumps 121, respectively. Thereby, it ispossible to cause the contact portion 112A to be stably connected withthe internal connection terminal 117.

Thus, in this embodiment, the internal connection terminal 117, which isconnected with the contact portion 112A, is electrically connected withthe external connection terminal 118 via the interposer 119, which isprovided in the wiring substrate 115A. As a result, by appropriatelyarranging the interposer 119, it is possible to arbitrarily set a wiringpath for electrically connecting the internal connection terminal 117with the external connection terminal 118.

Thus, as a result of the wiring path from the contact portion 112A tothe external connection terminal 118 being formed not in the contactor111 but in the wiring substrate 115A, it is not necessary to produce amultilayer contactor, and the single-layer contactor 111 can be used.Thus, it is possible to reduce the cost of the contactor 111.

Further, a glass epoxy substrate, which is generally used as a wiringsubstrate in electronic equipment, can be used as the wiring substrate115A. Therefore, it is possible to reduce the cost of the wiringsubstrate 115A. As a result, it is possible to reduce the cost of thesemiconductor testing device 110A.

Further, the contact portion 112A provided in the contactor 111 causesan electric signal from the semiconductor device 120 to directly flow tothe wiring substrate 115A. Therefore, even when the pitch of the bumps21 is reduced, it is not necessary to provide electric wires 108Abetween membrane terminals 106A-1 and 106A-2 (see FIG. 30). Accordingly,in the arrangement of this embodiment, it is possible to shorten thewire length between the internal connection terminal 117 and theexternal connection terminal 118, and to simplify the wiringarrangement, and, as a result, it is possible to use the semiconductortesting device 110A in a high-speed electrical test.

In the first embodiment, the wiring substrate comprises a multi-layersubstrate. As a result, it is possible to achieve the contactor with aminute pitch of the contact portions, and, also, it is possible toprovide the semiconductor testing device which can be used for ahigh-speed test.

Further, the semiconductor testing device 110A has an arrangement suchas, as shown in FIG. 28, to permit installation and removal of thecontactor 111 onto and from the wiring substrate 115A. Thereby, when thecontact portion 112A is degraded as a result of the semiconductortesting device 110A being used repeatedly for testing many semiconductordevices 120, the contactor 111 is replaced with a new one. Thereby, itis possible to maintain reliability of the test performed on thesemiconductor devices 120.

As a result of the cost of the contactor 111 being reduced, as mentionedabove, when replacement of the contactor 111 is needed, it is possibleto perform replacement at a low cost. Therefore, the cost required forthe maintenance can be reduced.

Advantages of the twenty-third embodiment will now be described indetail.

Recently, a highly integrated and high-density semiconductor devicehaving spherical connection terminals (bumps) has been produced. As aresult, bump size and pitch of the semiconductor device have been agreatly reduced. Therefore, achievement of a high-accuracy contactorwhich can come into contact with an arrangement of minute terminals ofthe semiconductor device, and maintenance of stable electricalconnection with the minute terminals have been very important objects.

Further, as the pitch of the terminals of the semiconductor is reduced,it is necessary to use a multilayer wiring. Thereby the cost of theminute-pitch contactor increases.

Generally speaking, a semiconductor testing device has a contactor whichis used for electrical connection with a semiconductor device. Thecontactors provided in the semiconductor testing devices are classifiedinto so-called pogo-pin type ones in which pins come into contact withterminals of the semiconductor device using spring forces, andmembrane-type ones in which spherical-surface terminals which are to beconnected with the spherical connection terminals (bumps) are formed ona thin insulation film through, for example, plating or the like.

FIG. 29A shows a pogo-pin type semiconductor testing device 10lA. In thesemiconductor testing device 10lA, coil springs 103 are provide througha pair of substrates 102 a, 102 b. By using the elastic forces of thecoil springs 103, pogo pins 104 are lifted and lowered, and, thus, thepogo pins 104 come into contact with the bumps (not shown in the figure)provided on the semiconductor device.

However, because the coil springs 103 are used in the semiconductortesting device 101A, it is not possible to use the semiconductor testingdevice 101A for a high-density semiconductor device. In order toeliminate this problem, the membrane-type semiconductor testing device101B has been developed.

The membrane-type semiconductor testing device 101B has a contactor inwhich spherical-surface terminals 106A (which is referred to as membraneterminals) are formed through plating. The membrane terminals 106A areconnected with the bumps (not shown in the figure) of the semiconductordevice, and a test of the semiconductor device is performed.

Further, on the top surface of an insulating substrate 105A, theelectric wires 108A, which are connected with the membrane terminals106A, respectively, are formed. The electric wires 108A connected withthe membrane terminals 106A extend to peripheral positions of theinsulating substrate 105A. Further, an elastic member 109A is providedbelow the contactor, and, even if variation in the heights of the bumpsof the semiconductor device exists, positive electrical connection isachieved as a result of the elastic member 109A being elasticallydeformed appropriately.

However, in the membrane-type semiconductor testing device 101B, theelectric wires 108A are laid on the top surface of the insulatingsubstrate 105A. As a result, as the terminal pitch is reduced, it is notpossible to provide a sufficient area in which the electric wires 108Aare laid.

That is, in the arrangement in which the electric wires 108A are laidonly on the top surface of the insulating substrate 105A, when ahigh-density semiconductor testing device 101B is produced, the pitchbetween each pair of adjacent membrane terminals 106A is reduced, and,also, the number of electric wires 108A increases. Therefore, as shownin FIG. 30, it is necessary to provide many electric wires 108A betweenadjacent membrane terminals 106A. In the example shown in FIG. 30, threewires are provided between the membrane terminals 106A-1 and 106A-2.However, the number of electric wires 108A which can be provided betweenthe pair of adjacent membrane terminals 106A-1, 106A-2, the pitch ofwhich is reduced, is naturally limited.

Therefore, as in a semiconductor testing device 101C shown in FIG. 31,provision of a multilayer contactor can be considered. In thesemiconductor testing device 101C shown in the figure, 3 layers ofinsulating substrates 105B are stacked. On each insulating substrate105B, an electric wire 108B is formed. Further, below the contactor, anelastic member 109B is provided, and, even if variation in the heightsof the bumps of the semiconductor device exists, positive electricalconnection can be achieved as a result of the elastic member 109B beingelastically deformed appropriately.

In this arrangement, the electric wire 108B is formed on each insulatingsubstrate 105B. Therefore, flexibility in layout of the electric wires108B is improved, and, therefore, it is possible to widen the pitchbetween adjacent electric wires 108B. Accordingly, when the pitchbetween adjacent membrane terminals 106B is reduced, it is possible towiden the space between adjacent electric wires 108B. As a result, thesemiconductor testing device 101C can be used for a high-densitysemiconductor device.

However, manufacturing of the contactor as a result of the plurality ofinsulating substrates 105B and the membrane terminals 106B being stackedis technically very difficult, and development thereof is difficult. Asa result, when such an arrangement is manufactured, the contactor isvery expensive.

Further in the membrane-type semiconductor testing device 101C,generally, when the membrane terminals 106B are degraded (movement ofsolder, adhesion of foreign bodies, etc.), or damaged, due to connectionwith the bumps, the contactor is replaced. However, when the contactoris expensive as mentioned above, the cost required for testing asemiconductor device is very high.

In order to eliminate these problems, a method of providing a contactorof one layer or two layers, providing an anisotropic conductive rubberbelow the contactor, and connecting the anisotropic conductive rubberwith the contactor can be considered. However, the anisotropicconductive rubber is very expensive, there is a limit to reduction ofthe pitch of a minute-pitch arrangement, and, also, durability thereofis not sufficient.

The twenty-third embodiment is directed to elimination of theabove-described problems. In this embodiment, it is possible to providea high-density, low-cost semiconductor testing device.

A twenty-fourth embodiment of the present invention will now bedescribed.

FIG. 32 shows a semiconductor testing device 110B in the twenty-fourthembodiment of the present invention. In FIG. 32, the same referencenumerals are given to parts/portions the same as those of thesemiconductor testing device 110A in the twenty-third embodiment shownin FIGS. 27A, 27B and 28, and descriptions thereof are omitted. Torespective embodiments (twenty-fifth through thirty-third embodiments),which will be described later, the same manner is applied.

In the semiconductor testing device 110B in this embodiment, a contactportion 112B has a thickness or a hardness such that, when the bump 121is connected with the contact portion 112B, the contact portion 112B canbreak the oxide film formed on the surface of the bump 121.

As is well known, in a case where the bump 121 is made of solder, theoxide film is formed on the surface of the bump 121. Because the oxidefilm has the property of insulation, the electric connectability betweenthe bump 121 and the contact portion 112B is degraded when the oxidefilm formed is left as it is.

As a result of the thickness or the hardness of the contact portion 112Bbeing increased, as in this embodiment, the contact portion 112B is ableto break the oxide film formed on the surface of the bump 121. Morespecifically, when the semiconductor device 120 is loaded on thecontactor 111 and the bump 121 slides on the contact portion 112B alongthe surface of the contact portion 112B, the contact portion 112B wipesthe bump 121, and can break the oxide film on the bump 121.

Thereby, it is possible to improve the electrical connectability betweenthe contact portion 112B and the bump 121, and a stable contactcondition can be maintained during the test. As a specific example ofthe contact portion 112B, in a case where a copper (Cu) is used as thematerial thereof, it is possible to break the oxide film as a result ofthe thickness of the contact portion 112B being on the order of 15 μmthrough 200 μm.

The twenty-fifth embodiment of the present invention will now bedescribed.

FIGS. 33A and 33B show a semiconductor testing device 110C in thetwenty-fifth embodiment of the present invention. In the semiconductortesting device 110C, an extending portion 122 is formed in the opening114. Specifically, as shown in FIG. 33B, the extending portion 122extends inside of the opening 114 by a length indicated by L from theedge of the opening 114.

The extending portion 122 is formed integrally with the insulatingsubstrate 113, at the position facing the contact portion 112A. Thecontact portion 112A is partially supported by the extending portion122.

As a result of providing the extending portion 122 which partiallysupports the contact portion 112A, it is possible to adjust the reactionforce which is developed in the contact portion 112A as a result of thecontact portion 112A being pushed by the bump 121. The adjustment of thereaction force can be performed as a result of the length L of theextending portion 122 being adjusted. As the extending portion 122 iselongated, the contact portion 112A is not likely to bend, and thereaction force increases. Conversely, as the extending portion 122 isshortened, the reaction force decreases.

Thus, in this embodiment, the contact pressure developed between thecontact portion 112A and the bump 121 when the semiconductor device 120is loaded on the contactor 111 can be adjusted to an appropriate value.Thereby, it is possible that the contact portion 112A and the bumps areconnected with one another in a good condition.

The twenty-sixth embodiment of the present invention will now bedescribed.

FIG. 34 shows a semiconductor testing device 110D in the twenty-sixthembodiment of the present invention. In the semiconductor testing device110D, a projection 123A, which comes into contact with the contactportion 112A, is formed in the opening 114.

As a result of the projection 123A being formed in the opening 114, whenthe contact portion 112A is bent and thus a first portion of the contactportion 112A is moved as a result of the first portion being pushed bythe bump 121 at the time of connection, the contact portion 112A comesinto contact with the projection 123A at a certain height (the height ofthe projection 123A), and a second portion of the contact portion 112Ais further moved, which second portion is a portion extending from aposition to the extending end 125 of the contact portion 112A, at whichposition the contact portion 112A is supported by the projection 123A.Accordingly, as a result of adjusting the height and the position of theprojection 123A, it is possible to adjust the contact pressure which isapplied to the bump 121 by the contact portion 112A. As a result, it ispossible to achieve the contact pressure which is optimum for theelectrical connection between the contact portion 112A and the bump 121.Thereby, it is possible that the contact portion 112A and the bump 121are connected with one another in a good condition.

This projection 123A can be made of a conductive metal (for example,gold, palladium, nickel, or the like), resin (for example, polyimide,epoxy, or the like), or an elastic material (for example, a conductiverubber in which carbon or the like is mixed, a sponge, or the like).

When the projection 123A is made of a conductive material, electricalconnection between the contact portion 112A and the internal connectionterminal 117 can be performed not only through the extending end 125 ofthe contact portion 112A but also through the projection 123A. As aresult, it is possible to positively perform the electrical connectionbetween the contact portion 112A and the internal connection terminal117.

When the projection 123A is made of an elastic material, as a result ofthe hardness of the projection 123A being adjusted, it is possible thatan appropriate contact pressure is developed between the bump 121 andthe contact portion 112A. Thereby, stable electrical connection can beachieved.

Further, in addition to the reaction force developed in the contactportion 112A when the bump 121 pushes the contact portion 112A, theelastic restoration force developed as a result of the projection 123Aitself being elastically deformed is applied to the bump 121 as thereaction force. Therefore, in this embodiment, even in a case where asufficient contact pressure cannot be obtained only by the reactionforce developed in the contact portion 112A, the contact pressurerequired for an appropriate electrical connection can be positivelydeveloped by the projection 123A. As a result, it is possible to achievestable electrical connection.

The adjustment of the contact pressure can be performed in the range ofhardness H_(R) C10 through 100 as a result of the hardness of thematerial and/or the height of the projection 123A being adjustedappropriately.

In the case where the projection 123A is made of metal, the projection123A can be formed through plating, wire bonding, or the like, forexample. In the case where the projection 123A is made of resin, theprojection 123A can be formed through potting or the like, for example.

When the projection 123A is formed through plating, in a case where thecontactor 111 is used for testing the semiconductor device 120 on whicha pattern is formed with a narrow pitch and the bumps are provided inhigh density, respective projections 123A can be manufactured in highaccuracy, in comparison to a case where respective projections 123A areformed through adhesion.

When the projection 123A is formed through wire bonding, because it ispossible to use an existing wire bonder, it is possible to form theprojection 123A at a low cost. Further, for a case where merely a smallnumber of semiconductor testing devices are produced for each type, itis possible to perform production for the respective types flexibly.

Further, when the projection 123A is formed through potting, because theprojection 123A can be formed through inexpensive equipment, it ispossible to reduce the cost required for forming the projection 123A.Further, for a case where merely a small number of semiconductor testingdevices are produced for each type, it is possible to perform productionfor the respective types flexibly.

The twenty-seventh and twenty-eighth embodiments of the presentinvention will now be described.

FIG. 35 shows a semiconductor testing device 110E in the twenty-seventhembodiment of the present invention. FIG. 36 shows a semiconductortesting device 110F in the twenty-eighth embodiment of the presentinvention. In the semiconductor testing device 110E, a sphericalprojection 123B is used. In the semiconductor testing device 110F, aring-shaped projection 123C (for example, an O ring) is used.

As a result of the spherical projection 123B or the ring-shapedprojection 123C being used, it is possible to provide the projection123B or 123C in the opening 114 easily. Each of the projections 123B and123C has a function similar to that of the projection 123A in thetwenty-sixth embodiment, and, also, materials and properties the same asthose of the projection 123A can be applied to each of the projections123B and 123C.

The shape of the contact portion will now be considered. In each of thetwenty-third through twenty-eighth embodiments, the contact portion 112Aor 112B has a simple tongue-like shape. However, the contact portion isused for the electrical connection with the internal connection terminal117. Therefore, as a result of appropriately changing the shape of thecontact portion, it is possible to improve the electrical connectabilitybetween the contact portion and the internal connection terminal 117.Variant examples of the shape of the contact portion will now bedescribed.

FIGS. 37A and 37B show contact portions 112C and 112D which are firstand second variant examples, respectively. A pointed-end portion isformed at an extending-end portion of each of the contact portions 112Cand 112D so that the electrical connectability with the internalconnection terminal 117 is improved.

A point portion 125A as the pointed-end portion is formed at theextending-end portion of the contact portion 112C shown in FIG. 37A. Asa result of the point portion 125A being formed at the extending-endportion of the contact portion 112C and thus being sharpened sharply,the point portion 125A sticks in or slides on the internal connectionterminal 117, so that the oxide film formed on the surface of theinternal connection terminal 117 can be broken. As a result, it ispossible to perform stable electrical connection between the contactportion 112C and the internal connection terminal 117. The point portion125A can be formed through etching or the like, for example.

A saw-tooth portion 125B is formed as the pointed-end portion at theextending-end portion of the contact portion 112D shown in FIG. 37B. Asa result of the saw-tooth portion 125B being formed at the extending-endportion of the contact portion 125B and thus many point portions beingprovided there, it is possible that the oxide film formed on the surfaceof the internal connection terminal 117 is broken at a plurality ofpositions. Thereby, more stable electrical connection can be performedbetween the contact portion 112D and the internal connection terminal117. This saw-tooth portion 125B can also be formed through etching orthe like.

With reference to FIGS. 38A through 48, contact portions 112E through112P, which are third through thirteenth variant examples, respectively,will now be described. FIGS. 38A, 39A, 40A, 41A, 42A, 43A, 44A, 45A, 46Aand 47A show side elevational sectional views of the contact portions112E through 112N, respectively, and FIGS. 38B, 39B, 40B, 41B, 42B, 43B,44B, 45B, 46B and 47B show bottom views of essential portions of thecontact portions 112E through 112N, respectively.

When the contactor provided with each of the third through twelfthvariant examples of the contact portions is provided on the wiringsubstrate 115A, as shown in FIG. 38A, spacers 170 are provided betweenthe contactor provided with the contact portion and the wiring substrate115A provided with the internal connection terminal 117. When the bump121 is inserted into the opening 114, the connection portion of thecontact portion is deformed and comes into contact with the internalconnection terminal 117, as shown in the figure. For the sake ofsimplification, the spacers 170, internal connection terminal 117 andthe insulating layers 116A, 116B will be omitted in FIGS. 39A, 40A, 41A,42A, 43A, 44A, 45A, 46A and 47A.

FIGS. 38A and 38B show the contact portion 112E which is the thirdvariant example. In this variant example, the contact portion 112Eincludes a pair of cantilever portions 156. Specifically, a ring portion154 is formed at a connection portion 124B of the contact portion 112E,and, as shown in FIG. 38B, the pair of cantilever portions 156 extendfrom opposite positions of the ring portion 154 toward the center of thering portion 154.

In this variant example, at a time of testing, the cantilever portions156 come into contact with the bump 121 at both sides thereof. Thereby,it is possible that the bump 121 is held stably. Therefore, it ispossible to increase the strength of the connection portion 124B, and itis possible to prevent the connection portion 124B from being deformedplastically.

FIGS. 39A and 39B show the contact portion 112F which is the fourthvariant example. In this variant example, a connection portion 124C is aforked cantilever portion 158. In this variant example, the connectionportion 124C is likely to be deformed. As a result, even if variation inthe height of the bump 121 exists, positive electrical connection isachieved as a result of the connection portion 124C being deformedappropriately.

However, because the connection portion 124C is likely to be deformed,in a case where the contact portion 112F is made of copper (Cu), plasticdeformation of the connection portion 124C is likely to occur.Accordingly, in this variant example, it is preferable that the contactportion 112F be made of a material which has elasticity and also highelectric conductivity.

FIGS. 40A and 40B show the contact portion 112G which is the fifthvariant example. Each of the above-described contact portions 112Athrough 112F has a cantilever shape. In contrast to this, the contractportion 112G of this variant example includes a portion 160 supported atboth ends thereof.

Specifically, a connection portion 124D has the portion 160 supported atboth ends thereof, and each of both ends of the portion 160 isintegrally connected with a ring portion 154. As a result of theconnection portion 124D having the portion 160 supported at both endsthereof, the mechanical strength of the connection portion 124D can beincreased. Thereby, the connection portion 124D can be prevented frombeing degraded due to long-term use.

FIGS. 41A and 41B show the contact portion 112H which is the sixthvariant example. In the contact portion 112H of this variant example, anopening (slit) 163 is formed at the center line of the connectionportion 124E. Thus, a pair of portions 162, each supported at both endsthereof, are formed. By forming the pair of portions 162 in theconnection portion 124E, the amount of deformation of the portions 162can be increased. Thereby, variation in the height of the bump 121 canbe effectively accommodated.

Further, by providing the opening 163 between the portions 162, abottom-end portion of the bump 121 is located in the opening 163 in theloaded condition. Thereby, movement of the bump 121 on the connectionportion 124E can be prevented. Accordingly, the bump 121 (semiconductordevice 120) can be positively positioned on the contact portion 112H(contactor 111).

In the sixth variant example, a bottom portion of the bump is insertedinto the opening 163 f when the bump is connected with the contactportion. Thereby, it is possible to control occurrence of deformation ofthe bottom portion of the bump. Further, because the contact areabetween the bump and the contact portion increases, it is possible toachieve positive electrical connection between the bump and the contactportion.

FIGS. 42A and 42B show the contact portion 112I which is the seventhvariant example. In the contact portion 112I of the seventh variantexample, a straight-line slit 126A is formed in a connection portion124F so that the connection portion 124F is deformable.

The possible amount of deformation of the connection portion 124F ofthis variant example is less than the possible amount of deformation ofthe connection portion 124E of the sixth variant example. However, themechanical strength of the connection portion 124F is higher than thatof the connection portion 124E. Accordingly, in accordance with thematerial of the bump 121 (for example, whether the bump 2 is made ofsolder or gold, and so forth), an appropriate one of the connectionportions 124E and 124F may be selected.

In the seventh variant example, a bottom portion of the bump is insertedinto the slit 126A when the bump is connected with the contact portion.Thereby, it is possible to control occurrence of deformation of thebottom portion of the bump. Further, because the contact area betweenthe bump and the contact portion increases, it is possible to achievepositive electrical connection between the bump and the contact portion.

FIGS. 43A and 43B show the contact portion 112J which is the eighthvariant example. In this variant example, a circular opening 126B isformed at the center of a connection portion 124G. The possible amountof deformation of the connection portion 124G is less than that of theconnection portion 124F in the seventh variant example, while themechanical strength of the connection portion 124G is higher than theconnection portion 124F. Accordingly, as mentioned above, an appropriateone of the connection portions 124E, 124F and 124G may be selected.Further, because the opening 126B is located at the center of theconnection portion 124G and also has the circular shape, the bump 121 isalways located at the center of the connection portion 124G.Accordingly, the bump 121 (semiconductor device 120) can be positivelypositioned on the contact portion 112J (contactor 111).

In the eighth variant example, a bottom portion of the bump is insertedinto the opening 126B when the bump is connected with the contactportion. Thereby, it is possible to control occurrence of deformation ofthe bottom portion of the bump. Further, because the contact areabetween the bump and the contact portion increases, it is possible toachieve positive electrical connection between the bump and the contactportion.

FIGS. 44A and 44B show the contact portion 112K which is the ninthvariant example. In this variant example, many small-diameter circularopenings 126C are formed in a connection portion 124H. By forming thelarge number of circular openings 126C in the connection portion 124H,similar to the above-described variant examples, the connection portion124H is deformable. The possible amount of deformation can be adjustedby appropriately selecting the number of the circular openings 126C andthe diameter of each circular opening 126C.

Further, by forming the large number of circular openings 126C, when thebump 121 is pressed onto the connection portion 124H, the edges of manyof the circular openings 26D come into contact with and cut into thebump 2. Thereby, the electrical connectability between the connectionportion 124H and the bump 121 can be improved.

FIGS. 45A and 45B show the contact portion 112L which is the tenthvariant example. In the above-described respective variant examples, theconnection portions 124B through 124H are integrally formed in thecontact portions 112E through 112K, respectively. In contrast to this,in this variant example, a connection portion 124I is a member differentfrom the contact portion 112L.

By using the connection portion 124I which is the member different fromthe contact portion 112L, it is possible to separately select thematerial of the contact portion 112L and the material of the connectionportion 124I. Accordingly, it is possible to select a material that isoptimum for the function of the contact portion 112L and to select amaterial that is optimum for the function of the connection portion124I. In the contact portion 112L shown in FIGS. 45A and 45B, in orderto set the possible amount of deformation of the connection portion 124Ito be large, the connection portion 124I is a foil-like terminal 164. Inthis variant example, the foil-like terminal 164 is made of aluminum(Al), and the contact portion 112L is made of copper (Cu).

FIGS. 46A and 46B show the contact portion 112M which is the eleventhvariant example. In this variant example, similar to the above-describedtenth variant example, a connection portion 124J is a member differentfrom the contact portion 112M. In this variant example, as shown in thefigures, the connection portion 124J is a cantilever-shaped wire 166.

The cantilever-shaped wire 166 is formed using the wire-bondingtechnique. Specifically, wire bonding is performed at a position on thecontact portion 112M in close proximity to the opening 114 using awire-bonding apparatus. Then, after a predetermined length of wire ispulled out, the wire is cut. As a result, the wire is in a conditionindicated by the broken line in FIG. 46A.

Then, the wire is bent to a position below the opening 114. Thus, thecantilever-shaped wire 166 is formed (indicated by the solid line inFIG. 46A). By forming the connection portion 124J using the wire-bondingtechnique, the connection portion 124J is easily and efficiently formed,and also, the cost therefor can be reduced. In this variant example, theconnection portion 124J is the cantilever-shaped wire 166, one end ofthe wire 166 being fixed and the other end of the wire 166 being free.Thereby, the possible amount of deformation of the cantilever-shapedwire 166 is relatively large. As a result, even if the variation of theheight of the bump 121 is large, the variation can be accommodated.

FIGS. 47A and 47B show the contact portion 112N which is the twelfthvariant example. In this variant example, similar to the above-describedeleventh variant example, the connection portion 124K is a wire 168.Although the connection portion 124J is the cantilever-shaped wire 166in the eleventh variant example, the connection portion 124K is the wire168 supported at both ends thereof in the twelfth variant example.

The wire 166 supported at both ends thereof is formed also using thewire-bonding technique. Specifically, first bonding is performed at aposition on a frame portion 154 of the contact portion 112N in closeproximity to the opening 114. Then, after the wire is pulled out apredetermined length, second bonding is performed at a position on theframe portion 154 opposite to the position of the first bonding.Thereby, each of the both ends of the wire 168 is fixed to the frameportion 154. By this arrangement, the mechanical strength of theconnection portion 124K in the twelfth variant example is higher thanthat of the connection portion 124J in the eleventh variant example.

Although the single wire 168 supported at both ends thereof is used inthis variant example, two wires 168, each supported at both endsthereof, may be used. The two wires 168 are arranged so as to cross toform a cross shape. In this arrangement, the effect provided by thetwelfth variant example can also be provided, and, also, movement of thebump 121 can be prevented. Accordingly, the bump 121 (semiconductordevice 120) can be positively positioned on the contact portion(contactor 111).

FIG. 48 shows the contact portion 112P which is the thirteenth variantexample. In this variant example, roughened surfaces 127A are formed onthe top surface (the surface with which the bump 121 comes into contact)and the portion (the bottom surface) which comes into contact with theinternal connection terminal 117, respectively, of the contact portion112P. Further, a roughened surface 127B is formed on the top surface ofthe internal connection terminal 117. The roughened surfaces 127A, 127Bmay be formed as a result of forming minute projections by changing aplating condition; as a result of roughening these surfaces by strikingsmall particles against these surfaces through blast; as result ofstamping on these surfaces using a member having a roughened surface, orthe like.

In this variant example, in the case where the roughened surface 127A isformed on the top surface of the contact portion 112P, the oxide filmformed on the surface of the bump 121 is broken by the roughened surface127A when the bump 121 is connected with the contact portion 112P.Thereby, stable electrical connection can be provided between thecontact portion 112P and the bump 121.

In the case where the roughened surface 127A is formed on the portion(the bottom surface) which comes into contact with the internalconnection terminal 117, the oxide film formed on the surface of theinternal connection terminal 117 is broken by the roughened surface 127Awhen the contact portion 112P comes into contact with the internalconnection terminal 117. Thereby, stable electrical connection can beprovided between the contact portion 112P and the internal connectionterminal 117.

Further, as a result of the roughened surface 127B being formed on theinternal connection terminal 117, even if the oxide film is formed onthe contact portion 112P, this oxide film can be broken by the roughenedsurface 127B when the contact portion 112P comes into contact with theinternal connection terminal 117. Thereby, stable electrical connectioncan be provided between the contact portion 112P and the internalconnection terminal 117.

When each of the roughened surfaces 127A, 127B has the average roughnessof 0.1 through 100 μm, the effects provided by the roughened surfacesare large.

Further, in the thirteenth variant example shown in FIG. 48, theroughened surface 127A is formed on each of both top and bottom surfacesof the contact portion 112P. However, it is also possible that theroughened surface 127A is formed on only one of the top and bottomsurfaces of the contact portion 112P. Further, although the roughenedsurface 127B is formed on the entire surface of the internal connectionterminal 117 in the thirteenth variant example, it is also possible thatthe roughened surface 127 b is formed only on the area with which thecontact portion 112P is connected.

The twenty-ninth and thirtieth embodiments of the present invention willnow be described.

FIG. 49 shows a semiconductor testing device 110G in the twenty-ninthembodiment of the present invention. FIG. 50 shows a semiconductortesting device 110H in the thirtieth embodiment of the presentinvention. In each of these embodiments, a positioning arrangement, forpositioning of the contactor 111 with respect to the wiring substrate115A when the contactor 111 is loaded on the wiring substrate 115A, isprovided.

As described above with reference to FIG. 28, the semiconductor testingdevice has an arrangement such as to permit installation and removal ofthe contactor 111 onto and from the wiring substrate 115A. Thereby, whenthe contact portion is degraded as a result of the semiconductor testingdevice being used repeatedly for testing many semiconductor devices 120,the contactor 111 is replaced with a new one. Thereby, it is possible toalways perform stable testing. When the contactor 111 is replaced with anew one, it is necessary to accurately position the contact portion withrespect to the internal connection terminal 117. Therefore, it isnecessary to accurately load the contactor 111 on the wiring substrate115A. For this purpose, in each of the semiconductor testing devices110G, 110H in the twenty-ninth and thirtieth embodiments, thepositioning arrangement for positioning the contactor 111 with respectto the wiring substrate 115A is provided.

In the semiconductor testing device 110G shown in FIG. 49, thepositioning arrangement includes first positioning holes 129 formed inthe insulating substrate 113 of the contactor 111, second positioningholes 130 formed in the wiring substrate 115A, and positioning pins 131which engage with the respective positioning holes 129, 130. Positioningof the contactor 111 (contact portion 112A) with respect to the wiringsubstrate 115A (internal connection terminal 117) is performed as aresult of each of the positioning pins 131 being inserted into, so as tobe fitted into, the respective one of positioning holes 129 and therespective one of the positioning holes 130 simultaneously so that thepositioning pins 131 engage with the positioning holes 129, 130.

In the semiconductor device 110H shown in FIG. 50, the positioningarrangement includes positioning holes 132 formed in the insulatingsubstrate 113 and positioning projections 133 formed on the top surfaceof the wiring substrate 115A. Positioning of the contactor 111 (contactportion 112A) with respect to the wiring substrate 115A (internalconnection terminal 117) is performed as a result of the positioningprojections 133 being inserted into, so as to be caused to engage with,the positioning holes 132, respectively.

In each of the semiconductor testing devices 110G and 110H in therespective embodiments, merely through a process of causing thepositioning pins 131 to engage with the positioning holes 129, 130, ormerely through a process of causing the positioning projections 133 toengage with the positioning holes 132, it is possible to position thecontactor 111 with respect to the wiring substrate 115A. Therefore,through the simple arrangement and simple operation, positioning of thecontact portion 112A with respect to the internal connection terminal117 can be positively performed.

Thus, positioning of the opening and the contact portion provided in thecontactor with respect to the internal connection terminal provided onthe wiring substrate can be easily and positively performed.

Each of these positioning holes 129, 130, 132 may be formed throughdrilling, punching, or etching, or using a laser. Further, if it isnecessary to perform positioning more accurately than theabove-described positioning methods, it is possible that a positioningarrangement includes a camera, an image recognizing unit, and so forth,so that positioning is performed through image recognition.

The thirty-first embodiment of the present invention will now bedescribed.

FIG. 51 shows a semiconductor testing device 110I in the thirty-firstembodiment of the present invention. In this embodiment, only theopening 114 is provided at a position at which no electrical connectionbetween the contactor 111 and the bump 121 is necessary, that is, anon-connection portion 134 having no contact portion 112A is provided.

The semiconductor device 120 loaded on the semiconductor testing device110I has many bumps 121. However, as is well known, when a test isperformed on this semiconductor device 120, all the bumps 121 are notnecessarily used for causing test signals to flow therethrough.(Hereinafter, the bumps, which are not used for causing test signals toflow therethrough, will be referred to as connection-unnecessary bumps121A.)

In this embodiment, the non-connection portion 134, for which no contactportion 112A is provided, is provided at the position facing theconnection-unnecessary bump 121A. Thereby, the connection-unnecessarybump 121A do not come into contact with a contact portion 112A. As aresult of the non-connection portion 134 being provided, theconnection-unnecessary bump 121A is merely located in the opening 114and does not come into contact with the contactor 111 when thesemiconductor device 120 is loaded on the semiconductor testing device110I.

Therefore, the connection-unnecessary bump 121A can be prevented frombeing deformed in the non-connection portion 134. Further, the reactionforce developed in the contact portion 112A does not exist in thenon-connection portion 134. Therefore, the pushing force to be appliedto the semiconductor device 120, by which force the semiconductor device120 is pushed to the semiconductor testing device 110I when thesemiconductor device 120 is loaded on the semiconductor testing device110I, can be reduced. As a result, the loading work is easier.

The thirty-second embodiment of the present invention will now bedescribed.

FIG. 52 shows a partial plan view of the semiconductor testing device110J in the thirty-second embodiment of the present invention. As shownin the figure, in the semiconductor testing device 110J in thisembodiment, a direction in which each contact portion 112A extends is adirection normal to a direction toward the center position (the centerposition of the semiconductor device) in a condition in which thesemiconductor device has been loaded on the semiconductor testing device110J.

This will now be described by considering the contact portion 112A-1shown in the figure as an example. When a line segment X is drawnbetween the center position of the semiconductor device and the centerposition of the contact portion 112A-1, the direction in which thecontact portion 112A-1 extends, that is, the direction in which theextending end 125 of the contact portion 112A-1 faces, is the directionindicated by the arrow Y. The direction indicated by the arrow Y isperpendicular to the line segment X. Thus, each contact portion 112A isarranged so as to line on a circumference of an imaginary circle, thecenter of which circle is the center position of the semiconductordevice.

The contactor 111 and the semiconductor device 120 have inherent ratesof thermal expansion, and the rate of thermal expansion of the contactor111 is different from the rate of thermal expansion of the semiconductordevice 120. Therefore, when a test, such as burn-in, in which heating isperformed, is conducted, a difference occurs in the amounts of thermalexpansion between the contactor 111 and the semiconductor device 120.When the difference occurs in the amounts of thermal expansion betweenthe contactor 111 and the semiconductor device 120, relativedisplacement occurs between the bumps 121 provided on the semiconductordevice 120 and the contact portions 112A provided on the contactor 111,respectively.

However, as a result of the semiconductor testing device 110J having theabove-described arrangement, directions of the relative displacementoccurring between the bumps 121 and the contact portions 112A are thedirections in which respective line segments X extend, that is, radialdirections. Therefore, even if the relative displacement occurs betweenthe bumps 121 and contact portions 112A, it is possible to keep thecontact pressures developed between the bumps 121 and the contactportions 112A, respectively, constant. This is because, in this case,the directions of the relative displacement occurring between the bumps121 and the contact portions 112A, respectively, are the directionsalong the widths of the contact portions 112A. As a result, the contactpressures developed between the bumps 121 and the contact portions 112A,respectively, do not change, even when the relative displacement occurs.Therefore, the above-described arrangement in which the direction inwhich each contact portion 112A extends, that is, the direction in whichthe extending end 125 of the contact portion 112A faces, is thedirection indicated by the arrow Y, shown in FIG. 52, enables stableelectrical connection to be maintained.

Further, it is also possible that the direction in which each contactportion 112A extends, that is, the direction in which the extending end125 of the contact portion 112A faces, is the direction in which theline segment X, shown in FIG. 52, extends. In this case, it is possibleto prevent the bumps 121 from separating from the contact portions 112A,respectively. This is because, in this case, the directions of therelative displacement occurring between the bumps 121 and the contactportions 112A are the directions indicated by the arrows Y1 and Y2,shown in FIG. 27B. Because the directions indicated by the arrows Y1 andY2, shown in FIG. 27B, are the longitudinal directions of the contactportion 112A, the bump 121 is not likely to separate from the contactportion 112A, even when the relative displacement occurs. Therefore, theabove-described arrangement in which the direction in which each contactportion 112A extends, that is, the direction in which the extending end125 of the contact portion 112A faces, is the direction in which theline segment X, shown in FIG. 52, extends enables stable electricalconnection to be maintained.

Thus, the direction in which the contact portion extends may be setbased on the directions of relative displacement occurring between therespective one of the spherical connection terminals (bumps) and thecontact portion due to a difference in thermal expansion between thecontactor and the semiconductor device. Thereby, it is possible to setthe direction in which the contact portion extends so that the contactpressure developed between the spherical connection terminal and thecontact portion is prevented from changing due to the relativedisplacement. Specifically, the direction in which the contact portionextends is set to a direction which is perpendicular to the directionsof the relative displacement. As a result, the contact pressuredeveloped between the spherical connection terminal and the contactportion can be prevented from changing, and, thus, stable connection canbe maintained. Alternatively, it is also possible to set the directionin which the contact portion extends so that the spherical connectionterminal is prevented from separating from the contact portion due tothe relative displacement. Specifically, the direction in which thecontact portion extends is set to a direction corresponding to thedirections of the relative displacement. As a result, the sphericalconnection terminal can be prevented from separating from the contactportion, and, thus, a stable connection can be maintained.

The thirty-third embodiment of the present invention will now bedescribed.

FIGS. 53A and 53B show a semiconductor testing device 110K in thethirty-third embodiment of the present invention. In this embodiment, asingle layer of wiring substrate 115B is used, and a contact portion112R is previously connected with the internal connection terminal 117.

As mentioned above, recently, the semiconductor device 120 operates athigh speed. In response thereto, signals used in testing of thesemiconductor device 120 flow at high speed. Thus, it is important toprotect the testing from entrance of disturbance. For this purpose,there is a case where a partial circuit of a semiconductor tester usedin testing of the semiconductor device 120 is provided on thesemiconductor testing device 110K. Electronic components 138, shown inFIGS. 53A, 53B, include the partial circuit of the semiconductor tester.

As locations at which the electronic components 138 are provided, thecontactor 111 or the wiring substrate 115B may be considered. However,it is very difficult to provide the electronic components 138 on thecontactor 111 which is a membrane substrate, and, also, the costrequired therefor is high. Further, when the electronic components 138are provided on the contactor 111, it is necessary to provide electronicwires for the electronic components 138 on the insulating substrate 113other than the contact portion 112R. Thereby, a problem occurs, that is,it is not possible to achieve a high-density arrangement.

Therefore, in this embodiment, the electronic components 138 areprovided on the wiring substrate 115B. Further, in order to achievehigh-speed transmission of a test signal and to prevent entrance ofdisturbance, it is necessary to reduce the wiring length of theinterposer between the internal connection terminal 117 and the externalconnection terminal 118 as much as possible. For this purpose, in thisembodiment, the single-layer substrate is used as the wiring substrate115B so that the wiring length is reduced. Electrical connection betweenthe internal connection terminal 117 and the external connectionterminal 118 is provided by using a through-hole conductor 136 formed inan insulating layer 116.

As a result of the contact portion 112R being previously connected withthe internal connection terminal 117, the contact portion 112R is notbent each time the bump 121 is inserted into the opening 114. Thereby,brittle fracture of the contact portion 112R, at the position at whichthe contact portion 112R is in contact with the periphery of the opening114, can be prevented. As a result, it is possible to elongate the lifeof the contactor 111.

The spherical connection terminal of the semiconductor device is notlimited to the bump made of solder. It is also possible that, in thesemiconductor device, for which the present invention can be used,another material (gold, copper, or the like, for example) is used as thematerial of the spherical connection terminal. Further, it is alsopossible that, in the semiconductor device, for which the presentinvention can be used, a connection terminal other than the sphericalconnection terminal (a stud-shaped bump, for example) can be used,alternatively.

Further, the wiring substrate is not limited to a substrate made of aresin such as glass epoxy. It is also possible to use a substrate madeof another material, such as a ceramic substrate or the like.

Further, the present invention is not limited to the above-describedembodiments, and variations and modifications may be made withoutdeparting from the scope of the present invention.

The contents of the basic Japanese Patent Application Nos.9-255786 and10-263579, filed on Sep. 19, 1997 and Sep. 17, 1998, respectively, arehereby incorporated by reference.

What is claimed is:
 1. A semiconductor testing device, which is used forperforming a test on a semiconductor device having spherical connectionterminals, comprising: a contactor, provided with a single layer ofinsulating substrate, in which substrate an opening is formed at aposition corresponding to a respective one of said spherical connectionterminals, said contactor also being provided with a contact portion,which includes a connection portion with which said respective one ofsaid spherical connection terminals is electrically connected, saidcontact portion being provided on said single layer of insulatingsubstrate so that said connection portion is located on said opening;and a wiring substrate, on which said contactor is mounted in a mannerwhich permits installation and removal of said contactor onto and fromsaid wiring substrate, said wiring substrate being provided with a firstconnection terminal which is provided on a first surface, on which saidcontactor is mounted, and is electrically connected with said contactportion, a second connection terminal which is provided on a secondsurface, which is opposite to said first surface, and is connectedexternally, and an interposer which electrically connects said firstconnection terminal with said second connection terminal, wherein thecontact portion is bendable so that, as the spherical connectionterminal is pressed onto the contact portion, the contact portion isbent, and thereby the connection portion of the contact portion comesinto contact with the first connection terminal of the wiring substrate.2. The semiconductor testing device as claimed in claim 1, wherein anextending portion is formed in said insulating substrate, said extendingportion extending in said opening so as to face said contact portion,and partially supporting said contact portion.
 3. The semiconductortesting device as claimed in claim 1, wherein a pointed-end portion isformed at an extending-end portion of said contact portion.